Application of Photosensitive Polyimide: Mask Saving Process for Buffer Coating
نویسندگان
چکیده
Issues in the LSI polyimide buffer coating process which uses photosensitive polyimide also as a mask of passivation film etching are reviewed. Change of lithography wave length from g-line to i-line causes the difficulty in the polyimide patterning. However, today's improved polymers, both ester type and ionic type, have enough ability to open 10 um windows. Dry etching condition must be adjusted to reduce the reaction products because this process cannot apply hard asking. It is clarified that the adhesion to the molding resin after PCT is improved by F at the polyimide surface and is deteriorated by 02 plasma treatment. Fluorinated polyimide can keep good adhesion even after 02 plasma treatment.
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